SK hynix

At the OCP Summit 2021, the South Korean company presented the HBM3 memory modules

The manufacturer has recently confirmed the development of 24GB HBM3 memory modules at speeds of up to 819GB/s per stack. These microcircuits are planned to be used in conjunction with high-performance GPUs in the near future.

The JEDEC Semiconductor Standardization Committee has not yet finalized the HBM3 memory specifications. SK hynix has independently increased its bandwidth from the 5.2 Gbps originally announced to 6.4 Gbps per contact. However, so far it is not known how close the characteristics of the memory chips from the South Korean manufacturer are to the final specifications of the standard, which will be used in mass production of next-generation graphics accelerators.

SK hynix HBM3 DRAM modules can contain up to 12 memory crystals stacked in a vertical stack with a controller at the bottom of the assembly and joined by a 1024-bit interface. Although the controller itself hasn't changed since the days of the HBM2 memory standard, the increased number of memory crystals in a module and the increased operating frequency allow for a data transfer rate through the interface of 819 GB/s to be achieved, which is 78% more than in HBM2E memory.

A theoretical product based on 12 SK hynix HBM3 memory modules will offer 288 GB of total memory with a maximum bandwidth of up to 9.8 TB / s.

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