SAMSUNG

Company starts production of memory modules for the automotive industry

Samsung Electronics has announced the start of mass production of high-performance solid state drives and next-generation RAM for the automotive industry.

We are talking in particular about PCIe Gen3 NVMe flash modules in BGA (Ball Grid Array) format with a capacity of 256 GB. They are equipped with a Samsung proprietary controller. The declared speed of sequential reading of information reaches 2100 MB / s, the speed of sequential writing is 300 MB / s.

Furthermore, the mass production of GDDR6 DRAM and DDR4 DRAM is organized: the capacity of the products in both cases is 2GB. The GDDR6 DRAM solution offers up to 14 Gbps of bandwidth per pin.

Finally, the launch of UFS (Universal Flash Storage) flash drives with a capacity of 128 GB.

The new products are aimed at advanced automotive infotainment systems and autonomous driving. The products meet the requirements of the AEC-Q100 standard, which means they can be used ​​in a temperature range from -40 to + 105 °C.

Image source: Samsung