TECH

3D X-DRAM: the new Japanese technology limitations of DRAM memory

The development of a Japanese company can do away with the previous limitations of DRAM.

Memory and storage prices have fluctuated wildly in recent years, where they have skyrocketed, for example, due to production difficulties, and where the entire market has collapsed with the emergence of a new technology. Now, a Japanese startup, NEO Semiconductor, has reported an exciting breakthrough, which could mean a huge leap forward in the world of DRAMs.

The company announced its first NAND-like 3D solution, which would replace traditional DRAM solutions. According to reports, the technology called 3D X-DRAM is eight times denser than the currently used versions: with 230 layers, we get a density of 128 Gbits, which can solve the previous recording capacity limit.

The production cost of capacitorless floating body cell technology is also not particularly high, which can speed up market adaptation.

According to NEO engineers, 1TB 3D X-DRAM solutions will be a reality by 2030, and AI solutions like ChatGPT will require high-performance, high-capacity data storage solutions.

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